dsb 30 c 60pb advanced schottky symbol definition r a t i n g s features / advantages: very low vf extremely low switching losses low irm-values improved thermal behaviour high reliability circuit operation low voltage peaks for reduced protection circuits low noise switching low losses typ. max. i fsm i r a ma v 150 i fav a v f 0.78 r thjc 1.75 k/w v r = t vj = min. 15 ms (50 hz), sine applications: rectifiers in switch mode power supplies (smps) free wheeling diode in low voltage converters v rrm v 60 10 t vj v c = t vj c = ma c 30 package: part number v r = i f =a v t c =125c p tot 70 w t c c = e as tbd mj t vj c = i as =a;l = h i ar a v a = tbd f = 10 khz 1.5v r typ.; t vj 150 c -55 high performance schottky diode low loss and soft recovery common cathode v i v rrm fav f = = = 60 15 0.69 15 t vj =45c 100 dsb 30 c 60pb v a v 60 v 60 25 25 t p =10 25 max. repetitive reverse voltage reverse current forward voltage average forward current thermal resistance junction to case virtual junction temperature total power dissipation max. forward surge current non-repetitive avalanche energy repetitive avalanche current conditions unit (marking on product) 0.69 t vj c = 25 c j pf j unction capacitance v r = v; f = 1 mhz t vj = c 100 125 i f =a 30 t vj = c 25 v 1.21 i f =a 15 i f =a 30 v 0.95 v f0 v 0.45 t vj = 150 c r f 10.7 ? m to-220ab threshold voltage slope resistance for power loss calculation only 25 rectangular, d = 0.5 2x industry standard outline epoxy meets ul 94v-0 rohs compliant ixys reserves the right to change limits, conditions and dimensi ? 2005 ixys all rights reserved 0614 data according to iec 60747and per diode unless otherwise specified
dsb 30 c 60pb advanced i rms a per pin* 35 r thch k/w 0.50 m d nm 0.6 mounting torque 0.4 t stg c 150 storage temperature -55 weight g 2 c b f a h g l k j d n m e r q dim. millimeter inches min. max. min. max. a 12.70 13.97 0.500 0.550 b 14.73 16.00 0.580 0.630 c 9.91 10.66 0.390 0.420 d 3.54 4.08 0.139 0.161 e 5.85 6.85 0.230 0.270 f 2.54 3.18 0.100 0.125 g 1.15 1.65 0.045 0.065 h 2.79 5.84 0.110 0.230 j 0.64 1.01 0.025 0.040 k 2.54 bsc 0.100 bsc m 4.32 4.82 0.170 0.190 n 1.14 1.39 0.045 0.055 q 0.35 0.56 0.014 0.022 r 2.29 2.79 0.090 0.110 symbol definition ratings typ. max. min. conditions rms current thermal resistance case to heatsink unit * irms is typically limited by: 1. pin-to-chip resi stance; or by 2. current capability of the chip. in case of 1, a common cathode/anode configuration and a no n-isolated backside, the whole current capability can be used by c onnecting the backside. outlines to-220ab f c n 60 mounting force with clip 20 ixys reserves the right to change limits, conditions and dimensi ? 2005 ixys all rights reserved 0614 data according to iec 60747and per diode unless otherwise specified
|
